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| PD- 91767 IRG4CH30KB IRG4CH30KB IGBT Die in Wafer Form C G E 1200 V Size 3 Ultra Fast Speed Short Circuit Rated 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 1200V Min. 3.0V Min., 6.0V Max. 300 A Max. 11 A Max. Test Conditions IC = 10A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A T J = 25C, VCE = 1200V TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.133" x 0.195" 150mm, with std. < 100 > flat .015" + / -.003" 01-5267 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRG4PH30K (When available) Die Outline 9/24/98 |
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